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Part Number Overview
Manufacturer Part Number
GA04JT17-247
Description
TRANS SJT 1700V 4A TO247AB
Detailed Description
1700 V 4A (Tc) (95°C) 106W (Tc) Through Hole TO-247AB
Manufacturer
GeneSiC Semiconductor
Standard LeadTime
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
GeneSiC Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc) (95°C)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
480mOhm @ 4A
Vgs(th) (Max) @ Id
-
Vgs (Max)
-
FET Feature
-
Power Dissipation (Max)
106W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AB
Package / Case
TO-247-3
Environmental & Export Classifications
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
1242-1134
GA04JT17247
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/GeneSiC Semiconductor GA04JT17-247
Documents & Media
Datasheets
1(GA04JT17-247)
Featured Product
1(Silicon Carbide Transistor)
PCN Obsolescence/ EOL
1(GA04JT17-247 EOL 15/Jun/2019)
Quantity Price
-
Substitutes
-