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Part Number Overview
Manufacturer Part Number
FDB2670
Description
MOSFET N-CH 200V 19A TO263AB
Detailed Description
N-Channel 200 V 19A (Ta) 93W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
182
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
19A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1320 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
93W (Tc)
Operating Temperature
-65°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-FDB2670-FSTR
FAIFSCFDB2670
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDB2670
Documents & Media
Datasheets
1(FDB2670)
Quantity Price
Quantity: 182
Unit Price: $1.65
Packaging: Bulk
MinMultiplier: 182
Packaging: Bulk
MinMultiplier: 182
Substitutes
-