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Part Number Overview
Manufacturer Part Number
IXFN50N120SK
Description
SICFET N-CH 1200V 48A SOT227B
Detailed Description
N-Channel 1200 V 48A (Tc) Chassis Mount SOT-227B
Manufacturer
IXYS
Standard LeadTime
88 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
115 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1895 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC
Base Product Number
IXFN50
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFN50N120SK
Documents & Media
Datasheets
1(IXFN50N120SK)
Environmental Information
1(Ixys IC REACH)
Featured Product
1(SiC Power MOSFET and Diode Gate Drive Evaluation Board Kit)
HTML Datasheet
1(IXFN50N120SK)
Quantity Price
Quantity: 100
Unit Price: $63.3985
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 10
Unit Price: $70.714
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $78.03
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Substitutes
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