China
Spain
Rusia
Italy
GermanyIXFK80N15Q
Part Number Overview
Manufacturer Part Number
IXFK80N15Q
Description
MOSFET N-CH 150V 80A TO264AA
Detailed Description
N-Channel 150 V 80A (Tc) 360W (Tc) Through Hole TO-264AA (IXFK)
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
HiPerFET™, Q Class
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
22.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
180 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
360W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-264AA (IXFK)
Package / Case
TO-264-3, TO-264AA
Base Product Number
IXFK80
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFK80N15Q
Documents & Media
Datasheets
1(IXF(H,K,T)80N15Q)
Environmental Information
1(Ixys IC REACH)
PCN Obsolescence/ EOL
1(Mult DEV EOL/OBS 08/Nov/2023)
HTML Datasheet
1(IXF(H,K,T)80N15Q)
Quantity Price
-
Substitutes
-