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Part Number Overview
Manufacturer Part Number
IPA65R650CEXKSA1
Description
MOSFET N-CH 650V 7A TO220
Detailed Description
N-Channel 650 V 7A (Tc) 28W (Tc) Through Hole PG-TO220-3-FP
Manufacturer
Infineon Technologies
Standard LeadTime
20 Weeks
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™ CE
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
28W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-FP
Package / Case
TO-220-3 Full Pack
Base Product Number
IPA65R650
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001295804
IPA65R650CEXKSA1-ND
448-IPA65R650CEXKSA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPA65R650CEXKSA1
Documents & Media
Datasheets
()
Other Related Documents
1(Part Number Guide)
Environmental Information
1(RoHS Certificate)
Featured Product
1(Data Processing Systems)
HTML Datasheet
()
Quantity Price
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