Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25°C
16.9A (Tc), 9.16A (Tc)
Rds On (Max) @ Id, Vgs
9mOhm @ 10A, 10V, 22.6mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
54nC @ 5V, 23nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
5178pF @ 25V, 2315pF @ 25V
Power - Max
5.2W (Tc), 3.9W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
20-SOIC (0.295", 7.50mm Width)
Supplier Device Package
20-SO
Base Product Number
BUK9M