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Part Number Overview
Manufacturer Part Number
PSMN070-200P,127
Description
MOSFET N-CH 200V 35A TO220AB
Detailed Description
N-Channel 200 V 35A (Tc) 250W (Tc) Through Hole TO-220AB
Manufacturer
Nexperia USA Inc.
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Nexperia USA Inc.
Series
TrenchMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
70mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
77 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4570 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
PSMN070-200P-ND
568-5779-5-ND
568-5779-ND
934055718127
PSMN070-200P
PSMN070-200P,127-ND
2156-PSMN070-200P127
NEXNXPPSMN070-200P,127
568-5779
568-5779-5
1727-4662
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Nexperia USA Inc. PSMN070-200P,127
Documents & Media
Datasheets
1(PSMN070-200P)
PCN Obsolescence/ EOL
1(Mid-Year Product Disc 30/Jun/2017)
PCN Design/Specification
1(Logo Marking Update 30/Nov/2016)
PCN Packaging
()
HTML Datasheet
1(PSMN070-200P)
Quantity Price
-
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