Part Number Overview

Manufacturer Part Number
ZXMN10A25K
Description
MOSFET N-CH 100V 4.2A TO252-3
Detailed Description
N-Channel 100 V 4.2A (Ta) 2.11W (Ta) Surface Mount TO-252-3
Manufacturer
Diodes Incorporated
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks

Technical specifications

Mfr
Diodes Incorporated
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
125mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17.16 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
859 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
2.11W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252-3
Package / Case
-

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

ZXMN10A25KDKR
ZXMN10A25KTR
981-ZXMN10A25K
ZXMN10A25KCT

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated ZXMN10A25K

Documents & Media

Datasheets
1(ZXMN10A25K)
Environmental Information
1(Diodes Environmental Compliance Cert)
HTML Datasheet
1(ZXMN10A25K)

Quantity Price

-

Substitutes

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