Part Number Overview

Manufacturer Part Number
STU6N60DM2
Description
MOSFET N-CH 600V 5A IPAK
Detailed Description
N-Channel 600 V 5A (Tc) 60W (Tc) Through Hole IPAK
Manufacturer
STMicroelectronics
Standard LeadTime
52 Weeks
Edacad Model
STU6N60DM2 Models
Standard Package
Supplier Stocks

Technical specifications

Mfr
STMicroelectronics
Series
MDmesh™ DM2
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.1Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
274 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
STU6N60

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

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Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STU6N60DM2

Documents & Media

Datasheets
1(STU6N60DM2)
PCN Assembly/Origin
1(Assembly Site 22/Nov/2022)
PCN Packaging
1(Mult Dev Inner Box Chg 9/Dec/2021)
EDA Models
1(STU6N60DM2 Models)

Quantity Price

Quantity: 3000
Unit Price: $0.59392
Packaging: Tube
MinMultiplier: 3000

Substitutes

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