Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
53.5mOhm @ 33.3A, 15V
Vgs(th) (Max) @ Id
3.6V @ 9.2mA
Gate Charge (Qg) (Max) @ Vgs
99 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 1000 V
Power Dissipation (Max)
326W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Base Product Number
C3M0040120