China
Spain
Rusia
Italy
GermanyIXTA26P10T
Part Number Overview
Manufacturer Part Number
IXTA26P10T
Description
MOSFET P-CH 100V 26A TO263
Detailed Description
P-Channel 100 V 26A (Tc) 150W (Tc) Surface Mount TO-263AA
Manufacturer
IXYS
Standard LeadTime
57 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
TrenchP™
Package
Tube
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
90mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
3820 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AA
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IXTA26
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTA26P10T
Documents & Media
Datasheets
1(IXT(Y,A,P)26P10T)
Environmental Information
1(Ixys IC REACH)
HTML Datasheet
1(IXT(Y,A,P)26P10T)
Quantity Price
Quantity: 300
Unit Price: $2.8121
Packaging: Tube
MinMultiplier: 300
Packaging: Tube
MinMultiplier: 300
Substitutes
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