China
Spain
Rusia
Italy
GermanyHUFA75617D3ST
Part Number Overview
Manufacturer Part Number
HUFA75617D3ST
Description
MOSFET N-CH 100V 16A TO252AA
Detailed Description
N-Channel 100 V 16A (Tc) 64W (Tc) Surface Mount TO-252AA
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
UltraFET™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
90mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
570 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
64W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
HUFA75
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi HUFA75617D3ST
Documents & Media
Datasheets
1(HUFA75617D3/D3S)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(HUFA75617D3/D3S)
Quantity Price
-
Substitutes
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