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Part Number Overview
Manufacturer Part Number
FDPF10N50UT
Description
MOSFET N-CH 500V 8A TO220F
Detailed Description
N-Channel 500 V 8A (Tc) 42W (Tc) Through Hole TO-220F-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FDPF10N50UT Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
UniFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.05Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1130 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Base Product Number
FDPF10
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDPF10N50UT
Documents & Media
Datasheets
1(FDP(F)10N50UT)
Environmental Information
()
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Packaging
1(Mult Devices 24/Oct/2017)
EDA Models
1(FDPF10N50UT Models)
Quantity Price
-
Substitutes
Part No. : TK8A55DA(STA4,Q,M)
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Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 38
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Substitute Type. : Similar
Quantity Available. : 38
Unit Price. : $1.54000
Substitute Type. : Similar