IRFBE30S

IRFBE30S

MOSFET N-CH 800V 4.1A D2PAK

N-Channel 800 V 4.1A (Tc) 125W (Tc) Surface Mount TO-263 (D2PAK)

Vishay Siliconix

50

Vishay Siliconix

-

Tube

Obsolete

N-Channel

MOSFET (Metal Oxide)

800 V

4.1A (Tc)

10V

3Ohm @ 2.5A, 10V

4V @ 250µA

78 nC @ 10 V

±20V

1300 pF @ 25 V

-

125W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IRFBE30

RoHS non-compliant

1 (Unlimited)

REACH Unaffected

EAR99

8541.29.0095

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFBE30S

1(IRFBE30S,L, SiHFBE30S,L)

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