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Part Number Overview
Manufacturer Part Number
IRF7473PBF
Description
MOSFET N-CH 100V 6.9A 8SO
Detailed Description
N-Channel 100 V 6.9A (Ta) 2.5W (Ta) Surface Mount 8-SO
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
95
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
26mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3180 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7473PBF
Documents & Media
Datasheets
1(IRF7473PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Packaging
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HTML Datasheet
1(IRF7473PbF)
Simulation Models
1(IRF7473TRPBF Saber Model)
Quantity Price
-
Substitutes
Part No. : FDS3572
Manufacturer. : onsemi
Quantity Available. : 7,070
Unit Price. : $1.60000
Substitute Type. : Similar
Quantity Available. : 7,070
Unit Price. : $1.60000
Substitute Type. : Similar