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Part Number Overview
Manufacturer Part Number
MMIX1T660N04T4
Description
MOSFET N-CH 40V 660A 24SMPD
Detailed Description
N-Channel 40 V 660A (Tc) 830W (Tc) Surface Mount 24-SMPD
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
20
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
660A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
0.85mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
860 nC @ 10 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
44000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
830W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
24-SMPD
Package / Case
24-PowerSMD, 21 Leads
Base Product Number
MMIX1T660
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS MMIX1T660N04T4
Documents & Media
Datasheets
1(MMIX1T660N04T4)
Environmental Information
1(Ixys IC REACH)
PCN Obsolescence/ EOL
1(MMIX1T660N04T4 obs 06/Nov/2023)
Quantity Price
-
Substitutes
-