Part Number Overview

Manufacturer Part Number
TRS8A65F,S1Q
Description
DIODE SIL CARBIDE 650V 8A TO220F
Detailed Description
Diode 650 V 8A Through Hole TO-220F-2L
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
20 Weeks
Edacad Model
TRS8A65F,S1Q Models
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tube
Product Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
1.6 V @ 8 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
40 µA @ 650 V
Capacitance @ Vr, F
28pF @ 650V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2 Full Pack
Supplier Device Package
TO-220F-2L
Operating Temperature - Junction
175°C (Max)
Base Product Number
TRS8A65

Environmental & Export Classifications

ECCN
EAR99
HTSUS
8541.10.0080

Other Names

264-TRS8A65FS1Q
TRS8A65F,S1Q(S2

Category

/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Toshiba Semiconductor and Storage TRS8A65F,S1Q

Documents & Media

EDA Models
1(TRS8A65F,S1Q Models)

Quantity Price

Quantity: 5000
Unit Price: $1.675
Packaging: Tube
MinMultiplier: 1
Quantity: 2000
Unit Price: $1.74589
Packaging: Tube
MinMultiplier: 1
Quantity: 1000
Unit Price: $1.85416
Packaging: Tube
MinMultiplier: 1
Quantity: 500
Unit Price: $2.16544
Packaging: Tube
MinMultiplier: 1
Quantity: 100
Unit Price: $2.4361
Packaging: Tube
MinMultiplier: 1
Quantity: 50
Unit Price: $2.8422
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $3.59
Packaging: Tube
MinMultiplier: 1

Substitutes

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