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Part Number Overview
Manufacturer Part Number
GC9986-8JR
Description
SI SCHOTTKY NON HERMETIC BEAM LE
Detailed Description
RF Diode Schottky - 1 Bridge 5V 100 mW
Manufacturer
Microchip Technology
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
-
Package
Tray
Product Status
Active
Diode Type
Schottky - 1 Bridge
Voltage - Peak Reverse (Max)
5V
Capacitance @ Vr, F
0.15pF @ 0V, 1MHz
Resistance @ If, F
15Ohm @ 10mA, 100MHz
Power Dissipation (Max)
100 mW
Operating Temperature
-65°C ~ 150°C
Package / Case
4-SMD, Flat Lead
Supplier Device Package
-
Environmental & Export Classifications
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0060
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Diodes/RF Diodes/Microchip Technology GC9986-8JR
Documents & Media
Environmental Information
()
PCN Assembly/Origin
1(Mult Dev 22/Aug/2020)
Quantity Price
-
Substitutes
-