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Part Number Overview
Manufacturer Part Number
SI3586DV-T1-GE3
Description
MOSFET N/P-CH 20V 2.9A 6TSOP
Detailed Description
Mosfet Array 20V 2.9A, 2.1A 830mW Surface Mount 6-TSOP
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2.9A, 2.1A
Rds On (Max) @ Id, Vgs
60mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
830mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Base Product Number
SI3586
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
SI3586DV-T1-GE3TR
SI3586DV-T1-GE3DKR
SI3586DV-T1-GE3CT
SI3586DVT1GE3
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SI3586DV-T1-GE3
Documents & Media
Datasheets
1(SI3586DV)
PCN Obsolescence/ EOL
1(SIL-0632014 16/Apr/2014)
HTML Datasheet
1(SI3586DV)
Quantity Price
-
Substitutes
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