China
Spain
Rusia
Italy
GermanySPB80P06P
Part Number Overview
Manufacturer Part Number
SPB80P06P
Description
MOSFET P-CH 60V 80A TO263-3
Detailed Description
P-Channel 60 V 80A (Tc) 340W (Tc) Surface Mount PG-TO263-3-2
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
23mOhm @ 64A, 10V
Vgs(th) (Max) @ Id
4V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs
173 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5033 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
340W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SPB80P
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000012841
SPB80P06PT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPB80P06P
Documents & Media
Datasheets
1(SPP,SPB 80P06P)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SPP,SPB 80P06P)
Quantity Price
-
Substitutes
Part No. : SPB80P06PGATMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 4,212
Unit Price. : $4.32000
Substitute Type. : Parametric Equivalent
Quantity Available. : 4,212
Unit Price. : $4.32000
Substitute Type. : Parametric Equivalent