Part Number Overview

Manufacturer Part Number
IPS80R900P7AKMA1
Description
MOSFET N-CH 800V 6A TO251-3
Detailed Description
N-Channel 800 V 6A (Tc) 45W (Tc) Through Hole PG-TO251-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,500
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
CoolMOS™ P7
Package
Tube
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
900mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
3.5V @ 110µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
45W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IPS80R900

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

SP001633526
2156-IPS80R900P7AKMA1
ROCINFIPS80R900P7AKMA1

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPS80R900P7AKMA1

Documents & Media

Datasheets
1(IPS80R900P7)
Simulation Models
1(CoolMOS™ Power MOSFET 800V P7 Spice Model)

Quantity Price

Quantity: 1500
Unit Price: $0.58492
Packaging: Tube
MinMultiplier: 1500

Substitutes

Part No. : IPU80R900P7AKMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 1,500
Unit Price. : $1.33000
Substitute Type. : Parametric Equivalent