Part Number Overview

Manufacturer Part Number
FQB85N06TM_AM002
Description
MOSFET N-CH 60V 85A D2PAK
Detailed Description
N-Channel 60 V 85A (Tc) 3.75W (Ta), 160W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10mOhm @ 42.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
112 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
4120 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.75W (Ta), 160W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
FQB8

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQB85N06TM_AM002

Documents & Media

Datasheets
1(FQB85N06, FQI85N06)
Environmental Information
()
HTML Datasheet
1(FQB85N06, FQI85N06)

Quantity Price

-

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