Part Number Overview

Manufacturer Part Number
STP24NM65N
Description
MOSFET N-CH 650V 19A TO220AB
Detailed Description
N-Channel 650 V 19A (Tc) 160W (Tc) Through Hole TO-220
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
STMicroelectronics
Series
MDmesh™ II
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
160W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
STP24N

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

1026-STP24NM65N
497-7026-5
-497-7026-5

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STP24NM65N

Documents & Media

Datasheets
1(STx24NM65N)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
HTML Datasheet
1(STx24NM65N)

Quantity Price

-

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