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Part Number Overview
Manufacturer Part Number
APT25SM120S
Description
SICFET N-CH 1200V 25A D3
Detailed Description
N-Channel 1200 V 25A (Tc) 175W (Tc) Chassis Mount D3
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Rds On (Max) @ Id, Vgs
175mOhm @ 10A, 20V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 20 V
FET Feature
-
Power Dissipation (Max)
175W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
D3
Package / Case
D-3 Module
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
APT25SM120S-ND
150-APT25SM120S
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT25SM120S
Documents & Media
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 16/Oct/2017)
Quantity Price
-
Substitutes
-