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Part Number Overview
Manufacturer Part Number
TPCC8008(TE12L,QM)
Description
MOSFET N-CH 30V 25A 8TSON
Detailed Description
N-Channel 30 V 25A (Ta) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSIV
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.8mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1A
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
700mW (Ta), 30W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance (3.3x3.3)
Package / Case
8-VDFN Exposed Pad
Base Product Number
TPCC8008
Environmental & Export Classifications
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TPCC8008(TE12LQM)CT
TPCC8008TE12LQM
TPCC8008(TE12LQM)TR
TPCC8008(TE12LQM)DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TPCC8008(TE12L,QM)
Documents & Media
Datasheets
1(Mosfets Prod Guide)
HTML Datasheet
1(Mosfets Prod Guide)
Product Drawings
()
Quantity Price
-
Substitutes
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