Part Number Overview

Manufacturer Part Number
STWA50N65DM2AG
Description
MOSFET N-CH 650V 38A TO247
Detailed Description
N-Channel 650 V 38A (Tc) 300W (Tc) Through Hole TO-247-3
Manufacturer
STMicroelectronics
Standard LeadTime
18 Weeks
Edacad Model
STWA50N65DM2AG Models
Standard Package
Supplier Stocks

Technical specifications

Mfr
STMicroelectronics
Series
MDmesh™ DM2
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
87mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
3200 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
STWA50

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STWA50N65DM2AG

Documents & Media

Datasheets
1(STWA50N65DM2AG)
PCN Assembly/Origin
1(Wafer 15/Feb/2019)
EDA Models
1(STWA50N65DM2AG Models)

Quantity Price

Quantity: 600
Unit Price: $5.22372
Packaging: Tube
MinMultiplier: 600

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