China
Spain
Rusia
Italy
GermanySIA777EDJ-T1-GE3
Part Number Overview
Manufacturer Part Number
SIA777EDJ-T1-GE3
Description
MOSFET N/P-CH 20V/12V 1.5A SC70
Detailed Description
Mosfet Array 20V, 12V 1.5A, 4.5A 5W, 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V, 12V
Current - Continuous Drain (Id) @ 25°C
1.5A, 4.5A
Rds On (Max) @ Id, Vgs
225mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
5W, 7.8W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-70-6 Dual
Supplier Device Package
PowerPAK® SC-70-6 Dual
Base Product Number
SIA777
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SIA777EDJ-T1-GE3
Documents & Media
Datasheets
1(SIA777EDJ)
HTML Datasheet
1(SIA777EDJ)
Quantity Price
-
Substitutes
-