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Part Number Overview
Manufacturer Part Number
EMD4DXV6T5G
Description
TRANS PREBIAS NPN/PNP 50V SOT563
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Manufacturer
onsemi
Standard LeadTime
Edacad Model
EMD4DXV6T5G Models
Standard Package
8,000
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
47kOhms, 10kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SOT-563
Base Product Number
EMD4DXV6
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
2156-EMD4DXV6T5G-OS
ONSONSEMD4DXV6T5G
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/onsemi EMD4DXV6T5G
Documents & Media
Datasheets
1(EMD4DXV6)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
1(Wire Bond 01/Dec/2010)
PCN Assembly/Origin
1(Mult Dev 24/Apr/2020)
PCN Packaging
1(Carrier Tape 15/Aug/2017)
HTML Datasheet
1(EMD4DXV6)
EDA Models
1(EMD4DXV6T5G Models)
Quantity Price
-
Substitutes
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