Part Number Overview

Manufacturer Part Number
SIHD14N60E-GE3
Description
MOSFET N-CH 600V 13A DPAK
Detailed Description
N-Channel 600 V 13A (Tc) 147W (Tc) Surface Mount DPAK
Manufacturer
Vishay Siliconix
Standard LeadTime
10 Weeks
Edacad Model
Standard Package
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
E
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
309mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1205 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
147W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
SIHD14

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

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Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHD14N60E-GE3

Documents & Media

Datasheets
1(SIHD14N60E)
Featured Product
1(MOSFETs in 5G)
HTML Datasheet
1(SIHD14N60E)

Quantity Price

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Substitutes

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