Part Number Overview

Manufacturer Part Number
FQB6N50TM
Description
MOSFET N-CH 500V 5.5A D2PAK
Detailed Description
N-Channel 500 V 5.5A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
386
Supplier Stocks

Technical specifications

Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.3Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 130W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

FAIFSCFQB6N50TM
2156-FQB6N50TM-FSTR

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQB6N50TM

Documents & Media

Datasheets
1(FQB6N50TM)

Quantity Price

Quantity: 386
Unit Price: $0.78
Packaging: Bulk
MinMultiplier: 386

Substitutes

-