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Part Number Overview
Manufacturer Part Number
FCP16N60N-F102
Description
MOSFET N-CH 600V 16A TO220F
Detailed Description
N-Channel 600 V 16A (Tc) 134.4W (Tc) Through Hole TO-220F
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FCP16N60N-F102 Models
Standard Package
800
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
199mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
52.3 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2170 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
134.4W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F
Package / Case
TO-220-3 Full Pack
Base Product Number
FCP16
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FCP16N60N_F102-ND
FCP16N60N_F102
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FCP16N60N-F102
Documents & Media
Datasheets
1(FCP16N60N(T))
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 01/Oct/2021)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mult Dev Mold Chg 28/Oct/2019)
PCN Packaging
1(Mult Devices 24/Oct/2017)
HTML Datasheet
1(FCP16N60N(T))
EDA Models
1(FCP16N60N-F102 Models)
Quantity Price
-
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