China
Spain
Rusia
Italy
GermanyFDP8441
Part Number Overview
Manufacturer Part Number
FDP8441
Description
POWER FIELD-EFFECT TRANSISTOR, 2
Detailed Description
N-Channel 40 V 23A (Ta), 80A (Tc) 300W (Tc) Through Hole TO-220-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
FDP8441 Models
Standard Package
187
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
280 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
15000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
FAIFSCFDP8441
2156-FDP8441
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDP8441
Documents & Media
Datasheets
1(Datasheet)
EDA Models
1(FDP8441 Models)
Quantity Price
Quantity: 187
Unit Price: $1.61
Packaging: Bulk
MinMultiplier: 187
Packaging: Bulk
MinMultiplier: 187
Substitutes
-