China
Spain
Rusia
Italy
Germany2N3506AL
Part Number Overview
Manufacturer Part Number
2N3506AL
Description
NPN POWER SILICON TRANSISTORS
Detailed Description
Bipolar (BJT) Transistor NPN 40 V 3 A 1 W Through Hole TO-5AA
Manufacturer
Microchip Technology
Standard LeadTime
40 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
40 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max)
1µA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA, 1V
Power - Max
1 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Supplier Device Package
TO-5AA
Base Product Number
2N3506
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microchip Technology 2N3506AL
Documents & Media
Datasheets
1(2N3506L thru 2N3507AL)
Environmental Information
()
PCN Assembly/Origin
1(Mult Dev Assembly Site 31/Jan/2024)
Quantity Price
Quantity: 100
Unit Price: $11.9901
Packaging: Bulk
MinMultiplier: 100
Packaging: Bulk
MinMultiplier: 100
Substitutes
-