Part Number Overview

Manufacturer Part Number
MT3S111P(TE12L,F)
Description
RF TRANS NPN 6V 8GHZ PW-MINI
Detailed Description
RF Transistor NPN 6V 100mA 8GHz 1W Surface Mount PW-MINI
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks

Technical specifications

Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
6V
Frequency - Transition
8GHz
Noise Figure (dB Typ @ f)
1.25dB @ 1GHz
Gain
10.5dB
Power - Max
1W
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 30mA, 5V
Current - Collector (Ic) (Max)
100mA
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
PW-MINI
Base Product Number
MT3S111

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Other Names

MT3S111P(TE12LF)DKR
MT3S111P(TE12LF)TR
MT3S111P(TE12LF)
MT3S111P(TE12LF)CT

Category

/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Toshiba Semiconductor and Storage MT3S111P(TE12L,F)

Documents & Media

Datasheets
1(MT3S111P)
PCN Obsolescence/ EOL
1(OBS 01/Jul/2022)

Quantity Price

-

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