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Part Number Overview
Manufacturer Part Number
IRFIB7N50LPBF
Description
MOSFET N-CH 500V 6.8A TO220-3
Detailed Description
N-Channel 500 V 6.8A (Tc) 46W (Tc) Through Hole TO-220-3
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2220 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
46W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
IRFIB7
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFIB7N50LPBF
Documents & Media
Datasheets
1(IRFIB7N50L,SiHFIB7N50L)
HTML Datasheet
1(IRFIB7N50L,SiHFIB7N50L)
Product Drawings
()
Quantity Price
-
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