Part Number Overview

Manufacturer Part Number
IRL3303PBF
Description
MOSFET N-CH 30V 38A TO220AB
Detailed Description
N-Channel 30 V 38A (Tc) 68W (Tc) Through Hole TO-220AB
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
26mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
68W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

*IRL3303PBF
SP001568314

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL3303PBF

Documents & Media

Datasheets
1(IRL3303PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Design Resources
1(IRL3303 Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRL3303PbF)

Quantity Price

-

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