Mfr
Microsemi Corporation
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
-
Drive Voltage (Max Rds On, Min Rds On)
-
Power Dissipation (Max)
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D3PAK
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA