Part Number Overview

Manufacturer Part Number
SIRA60DP-T1-RE3
Description
MOSFET N-CH 30V 100A PPAK SO-8
Detailed Description
N-Channel 30 V 100A (Tc) 57W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer
Vishay Siliconix
Standard LeadTime
14 Weeks
Edacad Model
Standard Package
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
0.94mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
125 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
7650 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIRA60

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

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Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIRA60DP-T1-RE3

Documents & Media

Datasheets
1(SIRA60DP)
PCN Design/Specification
()
HTML Datasheet
1(SIRA60DP)

Quantity Price

Quantity: 9000
Unit Price: $0.53603
Packaging: Tape & Reel (TR)
MinMultiplier: 6000
Quantity: 6000
Unit Price: $0.56196
Packaging: Tape & Reel (TR)
MinMultiplier: 6000

Substitutes

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