China
Spain
Rusia
Italy
GermanyFQP3N50C-F080
Part Number Overview
Manufacturer Part Number
FQP3N50C-F080
Description
MOSFET N-CH 500V 1.8A TO220-3
Detailed Description
N-Channel 500 V 1.8A (Tc) 62W (Tc) Through Hole TO-220-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQP3N50C-F080 Models
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
365 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
62W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FQP3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FQP3N50C-F080-ND
FQP3N50C_F080-ND
2832-FQP3N50C-F080-488
FQP3N50C-F080OS
FQP3N50C_F080
2832-FQP3N50C-F080
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQP3N50C-F080
Documents & Media
Datasheets
1(FQP3N50C, FQPF3N50C)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 21/Dec/2021)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Wafer Fab 28/Jul/2021)
PCN Packaging
1(Mult Devices 24/Oct/2017)
HTML Datasheet
1(FQP3N50C, FQPF3N50C)
EDA Models
1(FQP3N50C-F080 Models)
Quantity Price
-
Substitutes
Part No. : IXTP1R6N50D2
Manufacturer. : IXYS
Quantity Available. : 0
Unit Price. : $3.54000
Substitute Type. : Similar
Quantity Available. : 0
Unit Price. : $3.54000
Substitute Type. : Similar