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Part Number Overview
Manufacturer Part Number
MSCSM120HM31CT3AG
Description
SIC 4N-CH 1200V 89A SP3F
Detailed Description
Mosfet Array 1200V (1.2kV) 89A (Tc) 395W (Tc) Chassis Mount SP3F
Manufacturer
Microchip Technology
Standard LeadTime
37 Weeks
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
-
Package
Tube
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
4 N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
89A (Tc)
Rds On (Max) @ Id, Vgs
31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
3020pF @ 1000V
Power - Max
395W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
SP3F
Base Product Number
MSCSM120
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microchip Technology MSCSM120HM31CT3AG
Documents & Media
Datasheets
1(MSCSM120HM31CT3AG)
Environmental Information
()
Featured Product
1(Microchip Technology - Silicon Carbide Semiconductor Discrete Products)
PCN Assembly/Origin
1(Assembly Site 04/Aug/2023)
HTML Datasheet
1(MSCSM120HM31CT3AG)
Quantity Price
Quantity: 1
Unit Price: $270.37
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Substitutes
-