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Part Number Overview
Manufacturer Part Number
RJK1002DPN-A0#T2
Description
MOSFET N-CH 100V 70A TO220ABA
Detailed Description
N-Channel 100 V 70A (Ta) 150W (Ta) Through Hole TO-220ABA
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
25
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
70A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.6mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
94 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6450 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
150W (Ta)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-220ABA
Package / Case
TO-220-3
Base Product Number
RJK1002
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
559-RJK1002DPN-A0#T2
-1161-RJK1002DPN-A0#T2
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK1002DPN-A0#T2
Documents & Media
Datasheets
1(RJK1002DPN-A0)
PCN Obsolescence/ EOL
1(RJK 1-25-23)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
Quantity Price
-
Substitutes
Part No. : TK100E10N1,S1X
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 4,360
Unit Price. : $3.83000
Substitute Type. : Similar
Quantity Available. : 4,360
Unit Price. : $3.83000
Substitute Type. : Similar