Part Number Overview

Manufacturer Part Number
IRF1312PBF
Description
MOSFET N-CH 80V 95A TO220AB
Detailed Description
N-Channel 80 V 95A (Tc) 3.8W (Ta), 210W (Tc) Through Hole TO-220AB
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10mOhm @ 57A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 210W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

*IRF1312PBF
SP001564478

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF1312PBF

Documents & Media

Datasheets
1(IRF1312(S,L)PbF)
Other Related Documents
1(IR Part Numbering System)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRF1312(S,L)PbF)

Quantity Price

-

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