China
Spain
Rusia
Italy
Germany2N5830_D26Z
Part Number Overview
Manufacturer Part Number
2N5830_D26Z
Description
TRANS NPN 100V 0.2A TO92-3
Detailed Description
Bipolar (BJT) Transistor NPN 100 V 200 mA 625 mW Through Hole TO-92-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
200 mA
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
625 mW
Frequency - Transition
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Base Product Number
2N5830
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2N5830_D26Z
Documents & Media
Datasheets
1(2N5830)
Environmental Information
()
HTML Datasheet
1(2N5830)
Quantity Price
-
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