Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta)
Rds On (Max) @ Id, Vgs
90mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
750 pF @ 16 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
-
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
NTMSD2