IRFBE30

IRFBE30

MOSFET N-CH 800V 4.1A TO220AB

N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB

Vishay Siliconix

IRFBE30 Models

1,000

Vishay Siliconix

-

Tube

Obsolete

N-Channel

MOSFET (Metal Oxide)

800 V

4.1A (Tc)

10V

3Ohm @ 2.5A, 10V

4V @ 250µA

78 nC @ 10 V

±20V

1300 pF @ 25 V

-

125W (Tc)

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB

TO-220-3

IRFBE30

RoHS non-compliant

1 (Unlimited)

REACH Unaffected

EAR99

8541.29.0095

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFBE30

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1(SIL-018-2015-Rev-0 20/May/2015)

1(IRFBE30, SiHFBE30)

1(IRFBE30 Models)

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