Part Number Overview

Manufacturer Part Number
SIHP5N80AE-GE3
Description
E SERIES POWER MOSFET TO-220AB,
Detailed Description
N-Channel 800 V 4.4A (Tc) 62.5W (Tc) Through Hole TO-220AB
Manufacturer
Vishay Siliconix
Standard LeadTime
28 Weeks
Edacad Model
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
E
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.35Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
321 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

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Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHP5N80AE-GE3

Documents & Media

Featured Product
1(MOSFETs in 5G)

Quantity Price

Quantity: 10000
Unit Price: $0.5473
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Unit Price: $1.1696
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Quantity: 1
Unit Price: $1.46
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MinMultiplier: 1

Substitutes

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