Part Number Overview

Manufacturer Part Number
RDN050N20FU6
Description
MOSFET N-CH 200V 5A TO220FN
Detailed Description
N-Channel 200 V 5A (Ta) 30W (Tc) Through Hole TO-220FN
Manufacturer
Rohm Semiconductor
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks

Technical specifications

Mfr
Rohm Semiconductor
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
720mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
18.6 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
292 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220FN
Package / Case
TO-220-3 Full Pack
Base Product Number
RDN050

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor RDN050N20FU6

Documents & Media

Datasheets
1(RDN050N20)
Featured Product
1(MOSFET ECOMOS)
PCN Obsolescence/ EOL
1(Mult Dev EOL 29/Oct/2018)
HTML Datasheet
1(RDN050N20)
Product Drawings
1(TO-220FM, TO-220FN)

Quantity Price

-

Substitutes

Part No. : R8008ANX
Manufacturer. : Rohm Semiconductor
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Direct