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Part Number Overview
Manufacturer Part Number
IPT65R033G7XTMA1
Description
MOSFET N-CH 650V 69A 8HSOF
Detailed Description
N-Channel 650 V 69A (Tc) 391W (Tc) Surface Mount PG-HSOF-8-2
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
IPT65R033G7XTMA1 Models
Standard Package
2,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™ C7
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
69A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
33mOhm @ 28.9A, 10V
Vgs(th) (Max) @ Id
4V @ 1.44mA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5000 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
391W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-2
Package / Case
8-PowerSFN
Base Product Number
IPT65R033
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPT65R033G7XTMA1CT
2156-IPT65R033G7XTMA1
IPT65R033G7XTMA1-ND
IPT65R033G7XTMA1DKR
SP001456202
INFINFIPT65R033G7XTMA1
IPT65R033G7XTMA1TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPT65R033G7XTMA1
Documents & Media
Datasheets
1(IPT65R033G7)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(IPT65R033G7)
EDA Models
1(IPT65R033G7XTMA1 Models)
Simulation Models
1(CoolMOS™ Power MOSFET 650V G7 Spice Model)
Quantity Price
-
Substitutes
Part No. : IPT65R040CFD7XTMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 0
Unit Price. : $9.30000
Substitute Type. : MFR Recommended
Quantity Available. : 0
Unit Price. : $9.30000
Substitute Type. : MFR Recommended