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Part Number Overview
Manufacturer Part Number
SIHH21N60E-T1-GE3
Description
MOSFET N-CH 600V 20A PPAK 8 X 8
Detailed Description
N-Channel 600 V 20A (Tc) 104W (Tc) Surface Mount PowerPAK® 8 x 8
Manufacturer
Vishay Siliconix
Standard LeadTime
21 Weeks
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
176mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
83 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2015 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 8 x 8
Package / Case
8-PowerTDFN
Base Product Number
SIHH21
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIHH21N60E-T1-GE3CT
SIHH21N60E-T1-GE3DKR
SIHH21N60E-T1-GE3TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHH21N60E-T1-GE3
Documents & Media
Datasheets
1(SIHH21N60E)
Featured Product
1(SiHH26N60E, SiHH21N60E, SiHH14N60E, and SiHH11N60E MOSFETs)
HTML Datasheet
1(SIHH21N60E)
Quantity Price
Quantity: 3000
Unit Price: $2.03252
Packaging: Tape & Reel (TR)
MinMultiplier: 3000
Packaging: Tape & Reel (TR)
MinMultiplier: 3000
Substitutes
-