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Part Number Overview
Manufacturer Part Number
SIHB12N50C-E3
Description
MOSFET N-CH 500V 12A D2PAK
Detailed Description
N-Channel 500 V 12A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Vishay Siliconix
Standard LeadTime
10 Weeks
Edacad Model
SIHB12N50C-E3 Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
555mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1375 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB12
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHB12N50C-E3
Documents & Media
Datasheets
1(SIH(P,B,F)12N50C-E3)
PCN Assembly/Origin
1(Additional Assembly Site 21/Oct/2016)
HTML Datasheet
1(SIH(P,B,F)12N50C-E3)
EDA Models
1(SIHB12N50C-E3 Models)
Quantity Price
Quantity: 2000
Unit Price: $2.46248
Packaging: Tape & Reel (TR)
MinMultiplier: 1000
Packaging: Tape & Reel (TR)
MinMultiplier: 1000
Quantity: 1000
Unit Price: $2.61519
Packaging: Tape & Reel (TR)
MinMultiplier: 1000
Packaging: Tape & Reel (TR)
MinMultiplier: 1000
Substitutes
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Quantity Available. : 872
Unit Price. : $3.10000
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Unit Price. : $3.10000
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